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The HGTG15N120C3 is a third-generation silicon carbide MOSFET manufactured by Harris Corporation, now part of Wolfspeed. It features an N-channel enhancement mode configuration housed in a TO-247 package. The device supports a drain-source voltage (Vds) of 1200 V and delivers a continuous drain current (Id) of 15 A at 25°C. Key electrical parameters include a maximum on-resistance (Rds(on)) of 1.5 Ω, a gate threshold voltage ranging from 2.5 V to 4.5 V, and a total gate charge of 18 nC. It operates within a junction temperature range of -55°C to +175°C.
Verify the manufacturer lineage, as Harris Semiconductor assets were acquired by ON Semiconductor and subsequently Wolfspeed. Confirm that the specific marking corresponds to the original Harris production or the authorized successor lot. Ensure the component meets RoHS directives if required by the target assembly process.
Select this component when a 1200V rating is required with moderate current handling capabilities around 15A. The low gate charge facilitates faster switching speeds compared to earlier generations. Evaluate thermal management requirements carefully due to the higher on-resistance relative to modern high-current SiC devices.
This part belongs to the G3 series of Silicon Carbide MOSFETs originally developed by Harris Semiconductor. It represents an evolution in wide-bandgap semiconductor technology, offering superior performance over traditional silicon IGBTs in high-voltage applications. The TO-247 package provides a standard footprint for through-hole mounting in industrial power electronics.
Direct replacements may include the W3C15H120C3 from Wolfspeed, which maintains similar pinout and electrical specifications. Verify case dimensions and thermal pad configurations to ensure mechanical compatibility during substitution.