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The HGTG20N50C1D is an N-channel enhancement-mode insulated gate bipolar transistor (IGBT) manufactured by Harris Corporation. It features a 20A continuous collector current rating and supports voltage levels of 400V and 500V. The device integrates an anti-parallel ultrafast diode, eliminating the need for external components in bridge configurations. Key electrical characteristics include a maximum on-state voltage (VCE(ON)) of 2.5V and fast switching times with turn-off fall time (TFI) of 1µs or 0.5µs depending on the specific variant. Designed for high-voltage applications, it offers low on-dissipation and high input impedance, allowing direct drive from low-power integrated circuits.
Verify the manufacturer lineage as Harris Corporation's semiconductor assets were acquired by Intersil Corporation. Ensure the datasheet corresponds to the Intersil era documentation while referencing the original Harris part number. Confirm the specific suffix 'D' indicates the integrated diode configuration as per official component records.
Select this component for high-voltage switching applications requiring integrated freewheeling capabilities. Compare VCE(ON) and TFI specifications against system thermal and efficiency requirements. Ensure the 400V or 500V rating aligns with the peak reverse voltage of the target circuit topology.
This IGBT belongs to the HGTH/HGTP series designed for high-voltage, low on-dissipation applications. The 'D' suffix typically denotes the inclusion of an anti-parallel ultrafast diode within the same package, distinguishing it from standard IGBT variants that require external diodes for inductive load commutation.
Public confirmed substitute part numbers include HGTH20N50C1D and HGTH20N50E1. Verify pinout compatibility and thermal resistance parameters before substitution.