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Product Detailed Parameters
- Description：IGBT NPT 1200V 72A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：72 A
- Current - Collector Pulsed (Icm)：216 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 27A
- Power - Max：500 W
- Switching Energy：2.2mJ (on), 2.3mJ (off)
- Input Type：Standard
- Gate Charge：270 nC
- Td (on/off) @ 25°C：24ns/195ns
- Test Condition：960V, 27A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG27N120BN is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a HyprFET™ technology design with an integrated anti-parallel diode. The device is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 27 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.45 V, a gate-emitter leakage current of 250 nA, and a power dissipation capability of 390 W. The component operates within a temperature range of -55°C to +150°C and is housed in a TO-247-3 through-hole package.
Feature Summary
- Integrates an anti-parallel diode within the IGBT structure for simplified circuit design
- Utilizes HyprFET™ technology for optimized switching performance
- Designed for high-voltage applications requiring robust thermal management
Applications
- Motor control systems
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix and revision level against the official datasheet to ensure compatibility with existing designs. Confirm RoHS compliance status and check for any product change notifications or lifecycle updates directly from the manufacturer before procurement.
Selection Notes
Select this component based on its 1200V blocking capability and 27A current rating. Ensure the thermal resistance characteristics of the TO-247-3 package align with the system's heat dissipation requirements. Verify that the gate drive voltage levels are compatible with the specified maximum ratings.
Part Context
This part belongs to the HGTG series of HyprFET™ IGBTs from onsemi. These devices are engineered for medium-power applications, combining fast switching speeds with low conduction losses. The series is commonly used in industrial and consumer electronics where efficiency and reliability are critical.
Replacement Considerations
Check for direct pin-compatible alternatives within the same HGTG family or other manufacturers offering similar 1200V/27A specifications. Verify that any substitute maintains identical package dimensions and thermal characteristics to avoid PCB redesign.
