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Product Detailed Parameters
- Description：IGBT 600V 60A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：220 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：208 W
- Switching Energy：550µJ (on), 680µJ (off)
- Input Type：Standard
- Gate Charge：170 nC
- Td (on/off) @ 25°C：36ns/137ns
- Test Condition：480V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr)：55 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi HGTG30N60B3D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Ultrafast Soft (UFS) technology. It operates with a maximum collector-emitter voltage of 600 V and supports a continuous collector current of 60 A at 25°C. The device features a typical collector-emitter saturation voltage of 1.45 V and a maximum power dissipation of 208 W. It is housed in a TO-247-3 through-hole package, designed for high-voltage switching applications requiring fast recovery characteristics.
Feature Summary
- Ultrafast Soft (UFS) technology ensures low reverse recovery charge and soft recovery waveform to minimize electromagnetic interference.
- High thermal performance capability within the TO-247-3 package facilitates efficient heat dissipation in power modules.
- Robust short-circuit withstand capability provides protection during fault conditions in switching circuits.
Applications
- Switched-mode power supplies (SMPS)
- Motor control drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify component authenticity through authorized distribution channels due to potential availability constraints. Confirm RoHS compliance status via official manufacturer documentation prior to integration. Ensure storage conditions adhere to specified humidity and temperature limits to maintain junction integrity and prevent lead oxidation before soldering.
Selection Notes
Select this component for designs requiring 600V blocking capability with moderate current handling up to 60A. Evaluate gate drive requirements against the specified ±20V maximum rating. Compare saturation voltage and switching losses against alternative IGBTs to ensure compatibility with thermal management strategies and efficiency targets in the target application circuit.
Part Context
This part belongs to the HGTG series of UFS IGBTs from onsemi, engineered for high-frequency switching operations. The series emphasizes reduced switching losses and improved noise immunity compared to standard hard-recovery devices. It serves as a discrete solution for medium-power conversion stages where reliability and electromagnetic compatibility are critical design parameters.
Replacement Considerations
Direct substitutes include HGTG30N60C3D and HGTG30N60A4. Verify pinout compatibility and specific electrical parameter differences such as saturation voltage and current ratings before substitution. Ensure thermal interface materials and mounting hardware accommodate any dimensional variances between equivalent packages.
