ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 34A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 7A
- Power - Max：125 W
- Switching Energy：55µJ (on), 60µJ (off)
- Input Type：Standard
- Gate Charge：37 nC
- Td (on/off) @ 25°C：11ns/100ns
- Test Condition：390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The HGTG7N60A4 is a 600V N-Channel IGBT from the SMPS Series, manufactured by onsemi (formerly Fairchild Semiconductor). It features a TO-247 package with through-hole mounting. Key electrical parameters include a continuous collector current of 34 A at 25°C case temperature and a pulsed collector current of 56 A. The device exhibits a collector-emitter saturation voltage of 1.9 V typical at 25°C and 7 A. Total power dissipation is rated at 125 W at 25°C. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Optimized for high-frequency switch mode power supplies
- Combines MOSFET input impedance with bipolar transistor conduction characteristics
- Capable of >100kHz operation at 390V and 7A
- Features low conduction loss with moderate variation between 25°C and 150°C
Applications
- High frequency switch mode power supplies
- High voltage switching applications requiring low conduction losses
- Industrial and consumer equipment utilizing high voltage switching
Procurement Notes
Verify component authenticity against official datasheet specifications. Confirm package type matches TO-247 requirements. Check for ESD handling precautions during assembly. Ensure gate drive circuits respect maximum voltage ratings. Validate thermal management design against specified power dissipation limits.
Selection Notes
Select based on required operating frequency and voltage levels. Consider thermal resistance and case temperature derating curves for continuous current capacity. Evaluate switching energy losses against total allowable dissipation. Ensure gate drive voltage aligns with threshold and plateau requirements for optimal performance.
Part Context
This component belongs to the HGT(G,P)S7N60(A4) series, which includes variants in TO-263AB and TO-220AB packages. The part was originally designated as Developmental Type TA49331 before commercial release. It represents a standard N-channel IGBT solution for general-purpose high-voltage switching tasks.
Replacement Considerations
Direct replacements within the same family include HGTP7N60A4 (TO-220AB) and HGT1S7N60A4S9A (TO-263AB). Verify pinout compatibility and thermal interface requirements when substituting package types. Electrical parameters remain consistent across the series.
