ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 500V 12A TO-218 ISOLATED
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：500 V
- Current - Collector (Ic) (Max)：12:00 AM
- Current - Collector Pulsed (Icm)：17.5 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 20V, 17.5A
- Power - Max：75 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-218-3 Isolated Tab, TO-218AC
- Supplier Device Package：TO-218 Isolated
- Grade：-
- Qualification：-
Download product information
Overview
The HGTH12N50C1D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter breakdown voltage of 500 V and a continuous collector current rating of 12 A. The device is designed for through-hole mounting in an isolated TO-218 package, with a maximum power dissipation capability of 75 W. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Single IGBT configuration with isolated TO-218 packaging
- High voltage blocking capability suitable for power switching applications
- Wide operating temperature range for robust thermal performance
Applications
- Industrial motor control systems
- Power supply inverters
- High-voltage switching circuits
Procurement Notes
Verify component authenticity and datasheet alignment prior to procurement. Confirm RoHS compliance status as sources indicate non-compliance. Ensure the isolated TO-218 package matches design requirements. Validate that the 500V/12A ratings meet specific circuit needs. Check for active status and availability constraints.
Selection Notes
Select this component for applications requiring a single high-voltage IGBT in a through-hole format. Consider the 75W power dissipation limit and TO-218 thermal characteristics. Ensure the 500V breakdown voltage exceeds peak circuit voltages. Verify compatibility with driving circuits for N-channel operation. Assess thermal management solutions for the isolated package.
Part Context
Harris Corporation specialized in semiconductor components for defense and industrial markets. This IGBT belongs to their discrete power transistor lineup. The TO-218 isolated package provides mechanical stability and electrical isolation from heatsinks. It serves as a fundamental switching element in medium-power electronic designs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other 500V 12A N-channel IGBTs in TO-218 packages only if official equivalents are verified. Ensure pinout and thermal resistance parameters match before substitution.
