HGTH20N50C1

$5.79

Description：IGBT 500V 20A TO-218 ISOLATED
Series：-

SKU:8282830b6422 Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 500V 20A TO-218 ISOLATED
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：500 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：35 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 20V, 35A
Power - Max：100 W
Switching Energy：-
Input Type：Standard
Gate Charge：33 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-218-3 Isolated Tab, TO-218AC
Supplier Device Package：TO-218 Isolated
Grade：-
Qualification：-

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HGTH20N50C1

Overview

The HGTH20N50C1 is an N-channel enhancement-mode insulated gate bipolar transistor (IGBT) manufactured by Harris Corporation. It features a 500V collector-emitter voltage rating and a continuous collector current of 20A. The device exhibits a low on-state voltage of 2.5V, contributing to reduced conduction losses in high-voltage applications. Switching performance includes a turn-off time of 1 microsecond. Designed for direct drive from low-power integrated circuits, it offers high input impedance suitable for switching regulators and motor drivers.

Feature Summary

High input impedance allowing direct integration with low-power control ICs
Low on-state voltage for enhanced efficiency in power conversion
Fast switching speeds optimized for high-frequency operation

Applications

Switching regulators
Motor drives
Protection circuits

Procurement Notes

Verify the manufacturer origin as Harris Corporation or its successor entities, noting that Intersil acquired Harris Semiconductor assets. Confirm the specific datasheet revision and package type availability, as legacy components may have limited production support or require cross-referencing with updated part numbers from current manufacturers holding the intellectual property rights.

Selection Notes

Select this component for designs requiring a 500V blocking capability with a 20A current handling capacity. Ensure the driving circuit can manage the gate charge requirements despite the high input impedance. Evaluate thermal management strategies given the 2.5V saturation voltage at full load, as power dissipation will be significant without adequate heat sinking in continuous duty cycles.

Part Context

This IGBT belongs to the HGTH series designed for high-voltage, low on-dissipation applications. It represents a discrete power semiconductor solution intended to replace older technologies in medium-power industrial electronics. The device bridges the gap between MOSFET speed and BJT current handling, tailored for robust performance in demanding electrical environments.

Replacement Considerations

Public confirmed substitute part numbers include HGTH20N50E1 and HGTP20N50C1. Verify pinout compatibility and thermal characteristics before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.