HGTH20N50E1

$2.89

Description：IGBT 500V 20A TO-218 ISOLATED
Series：-

SKU:a70b3602c471 Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 500V 20A TO-218 ISOLATED
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：500 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：35 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 20V, 35A
Power - Max：100 W
Switching Energy：-
Input Type：Standard
Gate Charge：33 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-218-3 Isolated Tab, TO-218AC
Supplier Device Package：TO-218 Isolated
Grade：-
Qualification：-

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HGTH20N50E1

Overview

The HGTH20N50E1 is an N-channel enhancement-mode insulated gate bipolar transistor (IGBT) manufactured by Harris Corporation. Designed for high-voltage, low on-dissipation applications, this component features a collector current of 20 A and a collector-emitter breakdown voltage of 500 V. The device exhibits a maximum collector-emitter saturation voltage of 2.5 V and a turn-off time of 0.5 µs. It offers high input impedance and fast switching speeds suitable for direct drive from low-power integrated circuits.

Feature Summary

Enhancement-mode N-channel IGBT architecture designed for high-voltage operation
Low on-state voltage characteristics to minimize conduction losses
Fast switching speed with a turn-off time of 0.5 microseconds
High input impedance allowing direct integration with low-power control ICs

Applications

Switching regulators
Motor drives
Protection circuits

Procurement Notes

Verify the manufacturer origin carefully, as Intersil Corporation acquired Harris Semiconductor assets. Confirm that the specific suffix E1 matches the required datasheet specifications for the 500V variant. Ensure compatibility with legacy design requirements originally specified under the Harris brand before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring a 500V blocking capability combined with a 20A continuous current rating. The 0.5µs turn-off time makes it suitable for higher frequency switching applications compared to slower IGBTs. Consider the 2.5V saturation voltage for thermal management in power supply or motor drive topologies where efficiency is critical.

Part Context

This part belongs to the HGTH series of N-channel IGBTs produced by Harris Corporation. The series includes variants with different voltage ratings (400V and 500V) and current ratings (15A and 20A). The HGTH20N50E1 specifically denotes the 20A, 500V configuration within this family of high-performance power transistors.