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Product Detailed Parameters
- Description：IGBT 500V 20A TO-218 ISOLATED
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：500 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：35 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 20V, 35A
- Power - Max：100 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：33 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-218-3 Isolated Tab, TO-218AC
- Supplier Device Package：TO-218 Isolated
- Grade：-
- Qualification：-
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Overview
The HGTH20N50E1D is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a 500 V collector-emitter voltage rating and a continuous collector current of 20 A. The device includes an integrated anti-parallel Hyperfast diode for efficient commutation. Rated for through-hole mounting in a TO-218-3 Isolated Tab package, it dissipates up to 100 W of power. The component operates within a junction temperature range of -55°C to 150°C and utilizes standard input type control.
Feature Summary
- Integrated anti-parallel Hyperfast diode for fast recovery performance
- Industrial-grade N-channel IGBT construction
- Through-hole mounting capability with isolated tab design
Applications
- Industrial motor drive systems
- Power supply inverters
- High-frequency switching applications
Procurement Notes
Verify the specific suffix 'D' against manufacturer documentation to confirm exact binning or testing criteria. Ensure procurement channels provide original Harris Corporation or authorized distributor traceability. Confirm that the TO-218-3 Isolated Tab package matches the required thermal management and mechanical mounting specifications for the target assembly.
Selection Notes
Select this component when a 500 V blocking capability and 20 A continuous current are required in a single package. The integrated Hyperfast diode eliminates the need for external freewheeling diodes in certain topologies. Consider the TO-218-3 form factor for board-level thermal dissipation needs and verify that the standard input gate characteristics align with the available drive circuitry.
Part Context
This part belongs to the Harris Corporation industrial power transistor portfolio. It represents a discrete solution combining an IGBT switch with a complementary diode. The product line targets robust performance in demanding environments, utilizing the TO-218AC physical housing to facilitate heat sinking and reliable operation under high thermal stress conditions.
Replacement Considerations
Cross-reference with other 500 V, 20 A N-channel IGBTs featuring integrated fast recovery diodes. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement device supports the same -55°C to 150°C operating range and TO-218-3 isolated tab package dimensions.
