HGTP10N40C1D

$2.41

Description：IGBT 400V 17.5A TO-220
Series：-

SKU:acb03ed5c8bf Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 400V 17.5A TO-220
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：400 V
Current - Collector (Ic) (Max)：17.5 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：3.2V @ 20V, 17.5A
Power - Max：75 W
Switching Energy：-
Input Type：Standard
Gate Charge：19 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

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HGTP10N40C1D

Overview

The HGTP10N40C1D is an N-channel enhancement-mode Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector-emitter voltage of 400V and a continuous collector current of 10A. The device is housed in a TO-220-3 through-hole package, suitable for high-power applications. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 75W.

Feature Summary

Enhancement-mode N-channel IGBT design
Integrated anti-parallel ultrafast recovery diode
High voltage blocking capability up to 400V
Through-hole mounting for robust thermal management

Applications

Motor control drives
Switching power supplies
Inverter circuits
Induction heating systems

Procurement Notes

Verify component authenticity due to potential availability from secondary markets. Confirm RoHS compliance status as the product may not meet current environmental standards. Check datasheet revisions for electrical parameter updates before integration into new designs.

Selection Notes

Select this component for applications requiring moderate current handling with high voltage isolation. Ensure the driving circuit can support the gate charge requirements. Verify that the thermal solution maintains the junction temperature within the specified 150°C limit under peak load conditions.

Part Context

This part belongs to the HGTP series of discrete semiconductors designed for power switching. It complements other variants like the HGTP10N50C1D, which offers higher voltage ratings. The series targets industrial power electronics where reliability and fast switching are critical.

Replacement Considerations

Direct substitutes include HGTP10N40E1D and HGTP10N50C1D. Verify pinout compatibility and thermal resistance characteristics when swapping between these variants to ensure system performance remains stable.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.