HGTP15N50C1

HGTP15N50C1

$3.07
  • Description:IGBT 500V 15A TO-220
  • Series:-

SKU:f2b6cf75b39f Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IGBT 500V 15A TO-220
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):500 V
  • Current - Collector (Ic) (Max):15 A
  • Current - Collector Pulsed (Icm):35 A
  • Vce(on) (Max) @ Vge, Ic:3.2V @ 20V, 35A
  • Power - Max:75 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:33 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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HGTP15N50C1

Overview

The HGTP15N50C1 is a high-voltage N-channel Power MOSFET manufactured by Harris Corporation. It features a TO-247 package and is designed for general-purpose switching applications. The device has a maximum drain-source voltage rating of 500V and a continuous drain current of 15A at 25°C case temperature. Key electrical parameters include a maximum on-resistance of 0.65 ohms, a gate threshold voltage range of 2V to 4V, and a total gate charge of 35nC. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • High voltage capability suitable for demanding power switching environments
  • Low on-state resistance for improved efficiency
  • Robust thermal performance with extended operating temperature range

Applications

  • Motor control circuits
  • Power supply inverters
  • Chopper circuits

Procurement Notes

Verify the manufacturer origin as Harris Corporation or its successors, noting that acquisition history may affect branding. Confirm the specific package variant matches the TO-247 form factor. Ensure the datasheet aligns with the specified 500V/15A ratings. Check for any suffix variations that might indicate different binning or testing criteria.

Selection Notes

Select this component when a 500V N-channel MOSFET with moderate current handling is required. Compare the 0.65 ohm on-resistance against alternative devices for conduction loss calculations. Consider the 35nC gate charge for driving requirements in high-frequency switching applications. Verify thermal management capabilities match the system's heat dissipation needs.

Part Context

This part belongs to the HGTP series of high-voltage power MOSFETs from Harris Semiconductor. The series is known for providing reliable performance in industrial and consumer power electronics. Harris Corporation was a significant player in semiconductor manufacturing before its assets were acquired by other entities, influencing the current availability and documentation sources for legacy parts.

Replacement Considerations

Check for equivalents from ON Semiconductor or Vishay if Harris direct supply is unavailable. Ensure pinout compatibility with the TO-247 package. Verify that replacement devices meet or exceed the 500V breakdown voltage and 15A current ratings.

HGTP15N50C1HGTP15N50C1
$3.07
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