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The HGTP15N50C1 is a high-voltage N-channel Power MOSFET manufactured by Harris Corporation. It features a TO-247 package and is designed for general-purpose switching applications. The device has a maximum drain-source voltage rating of 500V and a continuous drain current of 15A at 25°C case temperature. Key electrical parameters include a maximum on-resistance of 0.65 ohms, a gate threshold voltage range of 2V to 4V, and a total gate charge of 35nC. The component operates within a junction temperature range of -55°C to +175°C.
Verify the manufacturer origin as Harris Corporation or its successors, noting that acquisition history may affect branding. Confirm the specific package variant matches the TO-247 form factor. Ensure the datasheet aligns with the specified 500V/15A ratings. Check for any suffix variations that might indicate different binning or testing criteria.
Select this component when a 500V N-channel MOSFET with moderate current handling is required. Compare the 0.65 ohm on-resistance against alternative devices for conduction loss calculations. Consider the 35nC gate charge for driving requirements in high-frequency switching applications. Verify thermal management capabilities match the system's heat dissipation needs.
This part belongs to the HGTP series of high-voltage power MOSFETs from Harris Semiconductor. The series is known for providing reliable performance in industrial and consumer power electronics. Harris Corporation was a significant player in semiconductor manufacturing before its assets were acquired by other entities, influencing the current availability and documentation sources for legacy parts.
Check for equivalents from ON Semiconductor or Vishay if Harris direct supply is unavailable. Ensure pinout compatibility with the TO-247 package. Verify that replacement devices meet or exceed the 500V breakdown voltage and 15A current ratings.