HGTP20N60A4

Description：IGBT 600V 70A TO-220-3
Series：-

SKU:ba2f645ea556 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 70A TO-220-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：280 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
Power - Max：290 W
Switching Energy：105µJ (on), 150µJ (off)
Input Type：Standard
Gate Charge：142 nC
Td (on/off) @ 25°C：15ns/73ns
Test Condition：390V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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HGTP20N60A4

Overview

The HGTP20N60A4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Fairchild Semiconductor. It features a TO-220AB through-hole package and operates with a collector-emitter breakdown voltage of 600 V. The device supports a continuous collector current of 70 A at 25°C case temperature and 40 A at 110°C. Key electrical parameters include a saturation voltage of 1.8 V at 20 A, a gate-emitter threshold voltage ranging from 4.5 V to 7.0 V, and a maximum power dissipation of 290 W at 25°C. The junction temperature range spans from -55°C to +150°C.

Feature Summary

Combines high input impedance of MOSFETs with low on-state conduction loss of bipolar transistors
Optimized for fast switching applications requiring low conduction losses
Features low saturation voltage characteristics

Applications

Uninterruptible Power Supplies (UPS)
Welding equipment
Induction heating systems

Procurement Notes

Verify the authenticity of the component when sourcing, as it was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Ensure that the specific TO-220AB package variant matches the required mechanical footprint. Check for updated datasheet revisions or product change notifications regarding manufacturing origin or material composition changes post-acquisition.

Selection Notes

Select this IGBT for high-voltage switching applications where low conduction losses are critical. Consider the thermal resistance of 0.43°C/W and the derating requirements above 25°C case temperature. Evaluate the switching energy losses against the application's operating frequency and load current to ensure the total power dissipation remains within the 290 W limit.

Part Context

This component belongs to the HGTG/HGTP series of 600V SMPS IGBTs. The HGTP20N60A4 specifically denotes the TO-220AB packaging variant, while the HGTG20N60A4 represents the TO-247 version. Both share identical electrical specifications but differ in physical mounting style.