HGTP2N120CN

Overview

The HGTP2N120CN is a Non-Punch Through (NPT) N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. It combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The device features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 13A at a case temperature of 25°C. It supports a short circuit withstand time of 8µs at VGE = 15V and includes avalanche energy ratings up to 18mJ. The component is housed in a TO-220AB package.

Feature Summary

• Non-Punch Through (NPT) design optimized for moderate frequency switching
• High input impedance combined with low on-state conduction loss
• Capable of handling 1200V switching Safe Operating Area (SOA)
• Rated for short circuit conditions and avalanche energy stress

Applications

• AC and DC motor controls
• Power supplies and drivers for solenoids, relays, and contactors

Procurement Notes

Verify the complete part number when ordering, as suffixes indicate specific packaging or variant configurations. Confirm that the TO-220AB package matches the thermal and mechanical requirements of the target PCB layout. Ensure static discharge precautions are followed during handling due to gate insulation susceptibility.

Selection Notes

Select this component for circuits requiring 1200V blocking capability with moderate current levels around 13A. Consider the thermal resistance of 1.20°C/W and power dissipation limits when designing heat sinks. Verify that the operating frequency remains within the limits defined by turn-on and turn-off energy losses at the intended junction temperature.

Part Context

This IGBT belongs to the MOS gated high voltage switching family developed by Fairchild Semiconductor, which was later acquired by onsemi. It serves as a foundational discrete power switch for industrial electronics where robustness against overvoltage and short circuits is required alongside efficient power conversion.

Replacement Considerations

HGT1S2N120CN is an equivalent device from the same series utilizing a TO-262 package.