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Product Detailed Parameters
- Description：IGBT 600V 17A TO-220-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：17 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 3A
- Power - Max：70 W
- Switching Energy：37µJ (on), 25µJ (off)
- Input Type：Standard
- Gate Charge：21 nC
- Td (on/off) @ 25°C：6ns/73ns
- Test Condition：390V, 3A, 50Ohm, 15V
- Reverse Recovery Time (trr)：29 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The HGTP3N60A4D is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 17 A at 25 °C. The device utilizes a TO-220AB through-hole package with three pins. Electrical specifications include a maximum gate-emitter voltage of ±20 V. The component operates within a temperature range from -55 °C to +150 °C, with physical dimensions measuring approximately 10.28 x 4.57 x 9.02 mm.
Feature Summary
- N-channel configuration for standard switching applications
- Through-hole mounting capability via TO-220AB package
- High voltage tolerance suitable for power conversion circuits
Applications
- Switched mode power supplies
- Motor control systems
- Induction heating appliances
Procurement Notes
Verify the manufacturer origin carefully, as Fairchild's semiconductor division was acquired by onsemi. Confirm that the specific part number corresponds to the original Fairchild production run rather than subsequent onsemi manufacturing. Ensure the package type matches the required TO-220AB footprint for your PCB design.
Selection Notes
Select this component when a 600 V blocking voltage and 17 A continuous current are required in a through-hole format. Compare the thermal resistance characteristics against your heatsinking capabilities. Verify compatibility with your drive circuit voltage levels, specifically the ±20 V gate-emitter limit.
Part Context
This IGBT belongs to the HGTG/HGTP series designed for general-purpose high-voltage switching. The 'P' suffix typically denotes the TO-220AB package variant, distinguishing it from other form factors like TO-247. It serves as a robust solution for medium-power industrial and consumer electronics applications requiring reliable high-voltage performance.
Replacement Considerations
Check for equivalents such as the HGTG30N60A4D for higher current requirements or the HGTP7N60A4D for intermediate ratings. Verify pinout compatibility before substitution. Note that post-acquisition parts may carry different marking conventions despite identical electrical specifications.
