HGTP5N120BND

Overview

The HGTP5N120BND is a Non-Punch Through (NPT) Series N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It integrates an anti-parallel Hyperfast Diode within the same package. The device features a continuous collector current of 21A at 25°C and a breakdown voltage of 1200V. Key electrical characteristics include a typical fall time of 175ns at a junction temperature of 150°C. The component supports short circuit ratings and offers low conduction loss, combining high input impedance with bipolar transistor conduction efficiency.

Feature Summary

• Non-Punch Through (NPT) IGBT design for robust high-voltage switching
• Integrated anti-parallel Hyperfast Diode for efficient commutation
• Low conduction loss characteristics suitable for moderate frequency applications

Applications

• AC and DC motor controls
• Power supplies and drivers for solenoids
• Drivers for relays and contactors

Procurement Notes

Verify the manufacturer designation carefully, as historical documentation links this part number to Intersil Corporation prior to its acquisition by onsemi. Confirm that the specific datasheet revision matches the required electrical parameters, particularly the 21A current rating and 1200V blocking capability. Ensure compliance with RoHS standards if applicable to the target assembly process.

Selection Notes

Select this component for applications requiring high voltage isolation with integrated freewheeling diode functionality. The NPT technology provides stable switching performance at moderate frequencies. Evaluate thermal management requirements based on the 21A continuous current rating and ensure the operating junction temperature remains within specified limits to maintain the typical 175ns fall time performance.

Part Context

This IGBT belongs to the MOS gated high voltage switching family, designed to combine MOSFET input impedance with bipolar conduction benefits. It represents a development type TA49308 configuration, succeeding earlier developmental types like TA49306. The integration of the Hyperfast Diode simplifies circuit design for inductive load switching scenarios.

Replacement Considerations

Direct substitutes may include other 1200V, 21A NPT IGBTs with integrated fast recovery diodes from onsemi or Fairchild Semiconductor product lines. Verify pinout compatibility and thermal resistance specifications before substitution.