SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The HGTP6N40EID is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector current rating of 7.5A and a collector-emitter breakdown voltage of 400V. The device utilizes an IGBT structure for efficient power switching applications.
Verify component authenticity through authorized distributors or certified suppliers. Confirm datasheet alignment with specific application requirements. Check for RoHS compliance status if environmental regulations apply to the end product. Ensure proper handling procedures are followed during storage and installation.
Select this component when a 400V blocking capability and 7.5A continuous current are required. Consider thermal management solutions due to power dissipation characteristics. Evaluate switching speed requirements against the device's inherent turn-on and turn-off times. Compare with alternative IGBTs if higher current ratings are needed.
This part belongs to the single IGBT category from Harris Corporation, a manufacturer known for defense and aerospace electronics. The company has undergone mergers and acquisitions, affecting product line continuity. This specific model represents a standard discrete power semiconductor component used in industrial and commercial power electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult official Harris Corporation replacement guides or equivalent specifications from other manufacturers for direct cross-referencing.