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Product Detailed Parameters
- Description：IGBT 600V 34A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 7A
- Power - Max：125 W
- Switching Energy：55µJ (on), 150µJ (off)
- Input Type：Standard
- Gate Charge：60 nC
- Td (on/off) @ 25°C：11ns/100ns
- Test Condition：390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The HGTP7N60A4-F102 is a single N-channel IGBT from onsemi, part of the HGT(G,P)7N60A4D series. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 34 A at 25°C. The device utilizes a TO-220AB package for through-hole mounting. Key electrical characteristics include a maximum collector-emitter saturation voltage of 2.7 V at 15 V gate drive and 7 A current. Power dissipation reaches 125 W, with an operating temperature range spanning -55°C to +150°C junction temperature.
Feature Summary
- High-voltage switching capability with 600 V collector-emitter rating
- Robust current handling with 34 A continuous collector current
- Low saturation voltage for efficient conduction in power circuits
- Wide thermal operating range suitable for demanding environments
Applications
- Induction heating systems
- Motor control drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix F102 against official datasheets to confirm packaging details, as standard variants may differ. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the component matches the required TO-220AB footprint and pinout configuration for your PCB design. Check for any obsolescence notices or lifecycle changes before finalizing procurement plans.
Selection Notes
Select this IGBT for applications requiring high voltage blocking and moderate current switching. Compare the 2.7 V saturation voltage against system efficiency requirements. Evaluate the 125 W power dissipation limit against your thermal management strategy. Consider the 34 A continuous current rating relative to peak load demands and derating factors across the specified temperature range.
Part Context
This component belongs to the HGT7N60A4 family of high-voltage IGBTs manufactured by onsemi. These devices are designed for general-purpose high-power switching applications. The series offers a balance of low conduction losses and fast switching speeds. The TO-220AB package provides reliable mechanical stability and thermal performance for through-hole assembly methods.
Replacement Considerations
Direct substitutes include the HGTP7N60A4D and HGT1S7N60C3DS9A. Verify pin compatibility and electrical parameters such as Vceo and Ic when considering alternatives. Ensure the replacement maintains the same package type and thermal characteristics.
