HGTP7N60A4D

Overview

The HGTP7N60A4D is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel hyperfast diode, manufactured by onsemi. It operates in the TO-220AB package and supports continuous collector currents of 34 A at 25°C case temperature and 14 A at 110°C. The device features a maximum collector-emitter saturation voltage of 2.7 V at 7 A and 15 V gate drive. Total power dissipation reaches 125 W at 25°C, with a thermal resistance from junction to case of 1.0 °C/W for the IGBT. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Optimized for high-frequency switch mode power supply applications
• Combines MOSFET input impedance with bipolar transistor low conduction loss
• Integrated anti-parallel hyperfast recovery diode
• Temperature compensating SABER model available

Applications

• High frequency switch mode power supplies
• High voltage switching circuits requiring low conduction losses
• Industrial power conversion systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status as specifications may change without notice. Check for obsolescence indicators since Fairchild Semiconductor was acquired by onsemi. Ensure handling precautions are followed due to electrostatic discharge sensitivity inherent to insulated gate devices.

Selection Notes

Select this component when designing circuits requiring 600V blocking capability with moderate current ratings up to 34 A. Consider the TO-220AB package for through-hole mounting requirements. Evaluate thermal management needs based on the 125 W power dissipation limit and 1.0 °C/W junction-to-case thermal resistance. Verify gate drive voltage compatibility within the ±20 V continuous rating.

Part Context

This part belongs to the HGTG/HGTP/HGT1S7N60A4D series developed originally by Fairchild Semiconductor. The series includes variants in different packages such as TO-247 and TO-263AB. The HGTP7N60A4D specifically denotes the TO-220AB package version. These devices utilize development types TA49331 for the IGBT and TA49370 for the diode.

Replacement Considerations

Equivalent package alternatives include HGTG7N60A4D (TO-247) and HGT1S7N60A4DS (TO-263AB). Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with current onsemi portfolios for updated availability.