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Product Detailed Parameters
- Description：IGBT 600V 14A TO-220AB
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 7A
- Power - Max：60 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The HGTP7N60C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation, part of the UFS series. It features an integrated anti-parallel hyperfast diode and is housed in a TO-220AB package for through-hole mounting. The device is rated for a maximum collector-emitter voltage of 600V and a continuous collector current of 7A at 25°C. Key electrical parameters include a typical fall time of 180ns at a junction temperature of 150°C and a power dissipation capacity of 70W. The component operates within a temperature range of -40°C to +150°C.
Feature Summary
- Combines high input impedance MOSFET gate drive with low on-state conduction loss bipolar characteristics
- Integrates an anti-parallel hyperfast recovery diode for efficient switching applications
- Features short-circuit rating capability for robust system protection
Applications
- High-frequency AC/DC and DC/DC power supplies
- Motor control drives and inverters
- Resonant converter circuits
Procurement Notes
Verify manufacturer authenticity as Harris Corporation assets were acquired by Intersil and subsequently Renesas. Confirm RoHS compliance status via official datasheets, as legacy versions may differ from modern equivalents. Check for End-of-Life (EOL) notices or obsolescence warnings before procurement planning.
Selection Notes
Select this component for applications requiring moderate current handling up to 7A with fast switching speeds. Ensure thermal management solutions support the 70W power dissipation rating. Verify that the gate drive voltage levels are compatible with the specified Vge limits for reliable operation.
Part Context
This IGBT belongs to the UFS (Ultra Fast Switching) series developed by Harris Corporation. The product line was later continued under Intersil following corporate acquisitions. The HGTP7N60C3 represents a specific current variant within the 600V family, distinguished by its 7A rating compared to higher-current counterparts like the HGTG12N60C3D.
Replacement Considerations
Equivalent parts include the HGTP7N60C3D from Fairchild Semiconductor and Intersil. Cross-reference specifications for saturation voltage and switching times when substituting.
