HMC-ALH244

Overview

The HMC-ALH244 is a two-stage GaAs MMIC HEMT low noise amplifier die designed for operation between 24 and 40 GHz. It provides 12 dB of gain with a typical noise figure of 3.5 dB. The device operates on a +4V supply voltage, drawing 45 mA of current. It is manufactured using Gallium Arsenide technology and is supplied in die form.

Feature Summary

• Two-stage GaAs MMIC HEMT architecture
• Low noise performance optimized for W-band frequencies
• Single positive voltage supply operation

Applications

• VSAT systems
• DBS receivers
• Point-to-point microwave links

Procurement Notes

Verify the specific suffix (e.g., SX) required for your application, as availability varies by configuration. Confirm that the die form factor matches your PCB assembly capabilities. Check current lifecycle status, as restricted availability may apply to this component series.

Selection Notes

Select this component for high-frequency applications requiring low noise figures in the 24-40 GHz range. Ensure the design supports single-ended or differential input/output configurations as specified in the datasheet. Verify thermal management requirements for the GaAs die package.

Part Context

This part belongs to Analog Devices' HMC family of RF amplifiers. It is specifically engineered for millimeter-wave applications where low noise and moderate gain are critical. The HMC-ALH244 complements other components in the W-band portfolio for complete receiver front-end solutions.

Replacement Considerations

Check for updated revisions within the HMC-ALH244 series. Evaluate alternative GaAs LNA dies from Analog Devices with similar frequency ranges if pin-out compatibility is not required.