HMC-ALH369-SX

Overview

The HMC-ALH369-SX is a GaAs MMIC HEMT three-stage, self-biased Low Noise Amplifier die operating between 24 and 40 GHz. It provides 22 dB of gain with a noise figure of 2.5 dB. The device operates on a single 5 V supply, drawing 100 mA of current. It features a P1dB compression point of 11 dBm and an input return loss of 13 dB. The component is designed for surface mount installation in a die package format.

Feature Summary

• Three-stage GaAs MMIC HEMT architecture
• Self-biased circuit design
• Single positive voltage operation

Applications

• Point-to-point microwave radio links
• Satellite communication systems
• Electronic warfare receivers
• Test and measurement equipment

Procurement Notes

Verify the specific suffix designation against the manufacturer's official documentation to confirm exact electrical tolerances and testing criteria. Ensure that the procurement channel provides valid traceability for the die form factor. Confirm compatibility with existing RF layout requirements before finalizing acquisition orders.

Selection Notes

Select this component for applications requiring high gain and low noise within the W-band spectrum. Evaluate system power constraints against the 500 mW dissipation requirement. Consider the die package format when designing the substrate interface and thermal management strategy for the target assembly.

Part Context

This part belongs to Analog Devices' HMC-ALH series of wideband low noise amplifiers. These components utilize GaAs HEMT technology to deliver performance across millimeter-wave frequencies. The series supports various frequency bands from Ka to W-band ranges for diverse wireless infrastructure needs.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation.