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Product Detailed Parameters
- Description:IC RF AMP VSAT 1GHZ-12GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tray
- Frequency:1GHz ~ 12GHz
- P1dB:19dBm
- Gain:17dB
- Noise Figure:1.5dB
- RF Type:VSAT, DBS
- Voltage - Supply:5V
- Current - Supply:55mA
- Test Frequency:1GHz ~ 12GHz
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC-ALH444-SX is a GaAs HEMT wideband low noise amplifier die from Analog Devices Inc. It operates in the 22 to 26.5 GHz frequency range. The device provides high gain with a noise figure of 3.0 dB. It requires a single positive supply voltage of 5 V and draws a typical current of 45 mA. The component features an input return loss of 10 dB and an output return loss of 10 dB. It delivers a P1dB compression point of 12 dBm and a small-signal gain of 9 dB. The unit weight is approximately 583.767 mg.
Feature Summary
- Utilizes GaAs HEMT technology for wideband performance
- Designed as a low noise amplifier for millimeter-wave applications
- Single-chip die configuration for integration flexibility
Applications
- Surveillance systems
- Point-to-point microwave radio links
- Electronic warfare subsystems
Procurement Notes
Verify availability status directly with authorized distributors or Analog Devices, as this component may be subject to limited supply conditions. Confirm that the specific suffix indicates the bare die form factor required for your assembly process. Ensure handling procedures account for the sensitive nature of unencapsulated semiconductor dies during installation.
Selection Notes
Select this component when a wideband LNA covering 22 to 26.5 GHz is required with a noise figure below 3.5 dB. Consider the 5 V supply requirement and 45 mA current draw for power budget calculations. Evaluate the need for bare die mounting capabilities versus packaged alternatives if PCB space is constrained.
Part Context
This part belongs to the HMC-ALH series of wideband low noise amplifiers manufactured by Analog Devices. These components are designed for high-performance RF front-end applications requiring minimal signal degradation across broad frequency bands. The series typically employs GaAs HEMT processes to achieve superior noise and linearity characteristics compared to other technologies.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs before considering alternative models.
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