ChipApex | Global Electronic Components Supplier
HMC-ALH444
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC RF AMP VSAT 1GHZ-12GHZ DIE
- Series：-
- Mfr：Analog Devices Inc.
- Package：Bulk
- Frequency：1GHz ~ 12GHz
- P1dB：19dBm
- Gain：17dB
- Noise Figure：1.5dB
- RF Type：VSAT
- Voltage - Supply：5V
- Current - Supply：55mA
- Test Frequency：1GHz ~ 12GHz
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The HMC-ALH444 is a GaAs MMIC HEMT low-noise wideband amplifier die manufactured by Analog Devices Inc. It operates within a frequency range of 1 to 12 GHz. The component provides 17 dB of gain and achieves a noise figure of 1.5 dB. It delivers an output power of +19 dBm at 1 dB gain compression. This surface-mount device is designed for high-performance RF applications requiring wideband amplification with minimal signal degradation.
Feature Summary
- Utilizes GaAs MMIC HEMT technology for enhanced performance
- Provides wideband amplification across 1 to 12 GHz
- Delivers high gain with low noise figure characteristics
Applications
- Surveillance systems
- VSAT and DBS receivers
- Wideband RF front-end modules
Procurement Notes
Verify the specific ordering suffix when sourcing, as it may indicate packaging variations or testing criteria. Confirm that the received component matches the exact part number designation. Ensure handling procedures account for the die package type. Check for any updated datasheet revisions prior to final design integration.
Selection Notes
Select this component for designs requiring broad frequency coverage from 1 to 12 GHz. Consider its 17 dB gain and 1.5 dB noise figure for sensitive receiver chains. Evaluate the +19 dBm P1dB output capability against system linearity requirements. Ensure the GaAs HEMT technology aligns with the overall circuit architecture and biasing constraints.
Part Context
This component belongs to the Analog Devices HMC series of RF integrated circuits. It is specifically categorized as a low-noise amplifier die. The product line targets applications demanding reliable wideband performance in compact form factors. It serves as a critical element in modern communication and sensing infrastructure.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing board layouts and bias networks if considering alternative devices from the same manufacturer family.
