HMC-ALH482

RF Amplifiers Overview

The HMC-ALH482 is a GaAs MMIC HEMT low noise wideband amplifier die operating between 2 and 22 GHz. It provides 16 dB of gain, 1.7 dB noise figure (up to 12 GHz), and +14 dBm output power at 1 dB gain compression.

RF Amplifiers Feature Summary

• GaAs MMIC HEMT technology for wideband performance
• Low noise figure specification up to 12 GHz
• High output power capability at 1 dB gain compression

RF Amplifiers Applications

• Wideband communication systems
• Test and measurement equipment
• Electronic warfare applications

RF Amplifiers Procurement Notes

Verify the specific suffix designation, such as -DIE, against official Analog Devices documentation to confirm the bare die configuration. Ensure handling procedures account for the unencapsulated semiconductor nature of the component. Cross-reference part numbers with current manufacturer catalogs to validate availability and revision status before procurement.

RF Amplifiers Selection Notes

Select this component for designs requiring broad frequency coverage from 2 to 22 GHz with minimal signal degradation. The integrated HEMT technology offers high gain and low noise characteristics suitable for sensitive receiver front ends. Evaluate thermal management requirements due to the exposed die format and ensure PCB layout supports high-frequency signal integrity.

RF Amplifiers Part Context

This component belongs to the Analog Devices RF amplifier portfolio, specifically designed as a monolithic microwave integrated circuit. It utilizes Gallium Arsenide technology to achieve performance metrics in the microwave range. The product serves as a critical active element for signal amplification in high-frequency electronic systems.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.