HMC-APH510

Description：IC RF AMP GPS 37GHZ-40GHZ DIE
Series：-
Mfr：Analog Devices Inc.
Package：Tray

SKU:58c3f0fc962e Category: RF Amplifiers Brand: Analog Devices Inc.

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Product introduction

Product Detailed Parameters

Description：IC RF AMP GPS 37GHZ-40GHZ DIE
Series：-
Mfr：Analog Devices Inc.
Package：Tray
Frequency：37GHz ~ 40GHz
P1dB：26dBm
Gain：20dB
Noise Figure：-
RF Type：General Purpose
Voltage - Supply：5V
Current - Supply：640mA
Test Frequency：37GHz ~ 40GHz
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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HMC-APH510

Overview

The HMC-APH510 is a high dynamic range, three-stage GaAs HEMT MMIC medium power amplifier designed for operation between 37 GHz and 40 GHz. It provides 20 dB of gain with a +26 dBm output power at the 1 dB compression point when powered by a +5V supply. The device is currently classified as obsolete in the product lifecycle.

Feature Summary

Utilizes GaAs HEMT technology for high dynamic range performance
Integrates a three-stage amplifier architecture within an MMIC design
Delivers consistent 20 dB gain across the specified frequency band

Applications

Ka-band communication systems
Satellite ground station equipment
Test and measurement instrumentation

Procurement Notes

This component is officially listed as obsolete by Analog Devices Inc. Procurement should focus on verifying the authenticity of remaining stock from authorized distributors or secondary market suppliers. Ensure that any available units are handled according to moisture sensitivity level requirements during storage and assembly processes.

Selection Notes

Engineers requiring this specific performance profile must consider alternative solutions due to the obsolete status. Selection criteria should prioritize devices offering comparable gain and output power within the 37-40 GHz range while ensuring availability through current manufacturing channels.

Part Context

The HMC-APH510 belongs to Analog Devices' portfolio of GaAs HEMT monolithic microwave integrated circuits. These components are engineered for applications demanding high linearity and power efficiency in millimeter-wave frequencies, specifically targeting the Ka-band spectrum for advanced radio frequency systems.