HMC1049SCPZ-EP-R7

Overview

The HMC1049SCPZ-EP-R7 is a GaAs pHEMT MMIC Low Noise Amplifier operating from 0.3 GHz to 20 GHz. It features a gain of 16 dB, a noise figure of 1.7 dB, and an input return loss of 13 dB. The device operates at 7 V with 70 mA current consumption. Key performance metrics include a P1dB of 15 dBm, OIP3 of 27 dBm, and power dissipation of 3.34 W. It functions within a temperature range of -55°C to +85°C and is housed in a QFN-32 package.

Feature Summary

• Utilizes GaAs pHEMT technology for high-frequency low-noise amplification
• Provides wideband operation across the 0.3 GHz to 20 GHz spectrum
• Engineered for military-grade reliability with enhanced performance stability

Applications

• Radar systems
• Satellite communication (SATCOM)
• Very Small Aperture Terminal (VSAT) networks

Procurement Notes

Verify component authenticity through authorized Analog Devices channels due to restricted supply status. Confirm that the EP suffix denotes enhanced performance specifications suitable for defense applications. Ensure compatibility with the specified 7 V supply voltage and thermal management requirements for the QFN-32 package before integration into final designs.

Selection Notes

Select this component for ultra-wideband LNA requirements where low noise figure and high linearity are critical. The GaAs MMIC construction supports frequencies up to 20 GHz. Consider the specific thermal dissipation needs given the 3.34 W power rating. Verify that the operating temperature range meets the environmental constraints of the target deployment scenario.

Part Context

This part belongs to the HMC1049 series of low noise amplifiers manufactured by Analog Devices Inc. It is designed as a monolithic microwave integrated circuit using Gallium Arsenide technology. The EP variant indicates enhanced performance characteristics typically associated with ruggedized or military-specification electronic components.

Replacement Considerations

Public confirmed substitute part numbers: None identified.