HMC1110

Overview

The HMC1110 is an x6 active broadband frequency multiplier chip manufactured using GaAs pHEMT technology. When driven by a +4 dBm input signal, the device provides a typical output power of +13 dBm across the 71 to 86 GHz frequency range. The component operates within a temperature range of -55°C to +85°C and requires a supply current of 175 mA with a power dissipation of 1.55 W. It is available in a die package format suitable for surface mount applications.

Feature Summary

• Utilizes GaAs pHEMT technology for high-frequency performance
• Provides active multiplication by a factor of six
• Operates as a broadband multiplier covering E-Band frequencies

Applications

• E-Band point-to-point wireless links
• VSAT communication systems
• Millimeter-wave test and measurement equipment

Procurement Notes

Verify availability status carefully as the standard HMC1110 part may be discontinued or subject to limited supply constraints. Confirm specific packaging requirements such as waffle pack configurations for the HMC1110-SX variant. Ensure compatibility with existing RF design infrastructure before ordering due to potential obsolescence issues.

Selection Notes

Select this component for designs requiring high-output power at millimeter-wave frequencies. Consider the GaAs pHEMT process characteristics for noise and linearity performance. Evaluate thermal management needs given the 1.55 W power dissipation rating. Verify input drive levels match the specified +4 dBm requirement for optimal operation.

Part Context

This component belongs to Analog Devices' portfolio of RF integrated circuits designed for wireless communications. It serves as a critical building block for generating higher frequency signals from lower frequency sources. The device supports advanced microwave applications where compact size and high efficiency are required.

Replacement Considerations

• HMC1110-SX