HMC1114PM5E

Overview

The HMC1114PM5E is a gallium nitride (GaN) broadband power amplifier manufactured by Analog Devices Inc. It operates within a frequency range of 2.7 GHz to 3.8 GHz, delivering typical output power exceeding 10 W (up to 42 dBm) at an input power of 18 dBm. The device achieves up to 55% power added efficiency (PAE). Key electrical parameters include a gain of 35 dB, a P1dB compression point of 41.5 dBm, and an output third-order intercept point (OIP3) of 44 dBm. It requires a 28 V supply voltage with a current draw of 150 mA. The component features an input return loss of 25 dB and supports a maximum power dissipation of 24 W. It is housed in a 32-lead LFCSP-CAV (5x5 mm) surface-mount package and operates across a temperature range of -40°C to +85°C.

Feature Summary

• Utilizes GaN technology for high linearity and efficiency in the S-band
• Provides high output power capability exceeding 10 W typical performance
• Offers wide instantaneous bandwidth covering 2.7 GHz to 3.8 GHz

Applications

• Electronic Warfare systems requiring high-power signal generation
• Military radar transmitters operating in S-band frequencies
• Communications infrastructure demanding high linearity and power density

Procurement Notes

Verify authenticity through authorized Analog Devices channels due to limited availability status reported by distributors. Confirm RoHS compliance details directly from the manufacturer's documentation. Ensure handling procedures account for moisture sensitivity classification. Validate that the specific PM5E suffix matches design requirements without assuming functional equivalence to other series variants. Check for updated revision notes regarding thermal or electrical characteristics before final integration.

Selection Notes

Select this component when high output power and linearity are critical in the 2.7–3.8 GHz range. The GaN technology offers superior power density compared to traditional silicon-based amplifiers. Consider the 28 V supply requirement and associated biasing complexity during circuit design. The LFCSP package necessitates careful PCB layout for thermal management and RF grounding. Evaluate system-level efficiency needs against the 55% PAE specification to ensure optimal power consumption.

Part Context

The HMC1114PM5E belongs to Analog Devices' HMC1114 series of GaN power amplifiers. This series is designed for applications requiring robust performance in harsh environments. The PM5E designation indicates a specific leadless package configuration optimized for surface-mount assembly. It serves as a high-performance solution for S-band applications where size, weight, and power efficiency are constrained.

Replacement Considerations

No direct public substitute part numbers are confirmed in official documentation. Similar GaN amplifiers from Analog Devices, such as the HMC1099PM5E or HMC8500PM5E, operate at different frequency bands and should not be assumed interchangeable without rigorous re-validation of all system parameters including impedance matching and thermal limits.