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Product Detailed Parameters
- Description:IC RF AMP VSAT 2GHZ-50GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tray
- Frequency:2GHz ~ 50GHz
- P1dB:17.5dBm
- Gain:11dB
- Noise Figure:4.5dB
- RF Type:VSAT
- Voltage - Supply:5V
- Current - Supply:65mA
- Test Frequency:10GHz
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC1126-SX is a GaAs pHEMT monolithic microwave integrated circuit (MMIC) distributed power amplifier operating from 2GHz to 50GHz. It provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm output power at 1 dB gain compression. The device requires 65 mA from a 5 V supply.
Feature Summary
- Utilizes GaAs pHEMT technology for high-frequency performance
- Designed as a wideband low-power RF/Microwave device
- Configured specifically for VSAT RF applications
Applications
- VSAT systems
- RF signal chain distribution
- Microwave communication links
Procurement Notes
Verify the exact datasheet version corresponding to the HMC1126-SX suffix, as specifications may vary between revisions. Confirm that the die package type matches the intended board layout requirements. Ensure the 5V supply voltage and 65mA current draw are supported by the system design before integration.
Selection Notes
Select this component when a wide bandwidth covering up to 50GHz is required alongside moderate gain. Consider the 5V supply requirement and specific current consumption against available power resources. Evaluate the thermal management needs associated with the die package format in the final assembly.
Part Context
This part belongs to the Analog Devices MMIC family, specifically targeting high-frequency amplifier solutions. The -SX suffix typically denotes a specific tape-and-reel or die configuration variant within the broader HMC1126 product line, ensuring compatibility with standard surface-mount processing techniques.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the source documentation.
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