HMC3587LP3BETR

Overview

The HMC3587LP3BETR is a HBT gain block MMIC amplifier manufactured by Analog Devices Inc. It operates within a frequency range of 4 GHz to 10 GHz and is housed in a 12-SMT (3x3) plastic QFN package. The device functions as a general-purpose RF amplifier suitable for 50-ohm applications, offering versatile performance as a cascadable IF or RF gain stage.

Feature Summary

• Heterojunction Bipolar Transistor (HBT) technology implementation
• Cascadable design for IF or RF gain stages
• Integrated into a compact 12-SMT plastic QFN package

Applications

• RF gain stages in communication systems
• IF amplification in receiver architectures
• General-purpose RF amplification in 50-ohm circuits

Procurement Notes

Verify the specific ordering suffix against official Analog Devices documentation to ensure correct package type and tape/reel configuration. Confirm that the 12-SMT (3x3) QFN footprint matches the target PCB layout requirements. Check RoHS compliance status through the manufacturer's current datasheet before finalizing procurement specifications.

Selection Notes

Select this component when a broadband HBT gain block is required for frequencies between 4 GHz and 10 GHz. Ensure the application supports the 5V operating supply voltage typical for this series. Verify that the 12-SMT package dimensions fit within the available board space constraints for the intended design.

Part Context

This part belongs to the HMC3587LP3BE family of HBT MMIC amplifiers. These devices are designed for high-performance RF applications requiring stable gain across a wide bandwidth. The LP3 variant specifically denotes the lead-free plastic QFN packaging option available from Analog Devices.

Replacement Considerations

Consult Analog Devices official substitution guides for compatible gain blocks. No direct public substitute part numbers are confirmed in the provided source material.