HMC413QS16GETR

Overview

The HMC413QS16GETR is a GaAs InGaP HBT MMIC power amplifier designed for cellular applications. It operates within a frequency range of 1.6 GHz to 2.2 GHz. Key electrical specifications include a gain of 23 dB, a noise figure of 5.5 dB, and a 1 dB compression point (P1dB) of 27 dBm. The device requires a supply voltage between 2.75 V and 5 V. It is housed in a 16-lead QSOP package with an exposed pad.

Feature Summary

• Utilizes GaAs InGaP HBT technology for high performance
• Optimized for cellular base station power amplification
• Provides high output power capability

Applications

• Cellular/PCS Base Stations
• Wireless Local Loop systems

Procurement Notes

Verify the specific suffix 'TR' indicates tape and reel packaging configuration when ordering. Confirm the manufacturer source is Analog Devices or Hittite to ensure component authenticity. Check for RoHS compliance status if required by assembly standards. Ensure the 16-QSOP-EP package footprint matches the PCB design constraints.

Selection Notes

Select this component for designs requiring moderate power output in the 1.6–2.2 GHz band. The 23 dB gain and 27 dBm P1dB suit intermediate power stages. Consider the 5.5 dB noise figure for system sensitivity requirements. The 2.75 V to 5 V supply range offers flexibility in power management design.

Part Context

This part belongs to the Hittite microwave and RF amplifier portfolio, now integrated into Analog Devices. It represents the GaAs HBT MMIC class used for wireless infrastructure. The QSOP-EP package provides thermal dissipation benefits for power amplification tasks in compact form factors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics before considering any alternative components from other manufacturers.