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Product Detailed Parameters
- Description:IC AMP BLE 2.2-2.8GHZ 8MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Strip
- Frequency:2.2GHz ~ 2.8GHz
- P1dB:27dBm
- Gain:20dB
- Noise Figure:7dB
- RF Type:Bluetooth
- Voltage - Supply:2.75V ~ 5V
- Current - Supply:300mA
- Test Frequency:-
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:8-MSOP-EP
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Overview
The HMC414MS8GE is a high-efficiency GaAs InGaP HBT MMIC power amplifier designed for operation between 2.2 and 2.8 GHz. It features a typical gain of 20 dB, a noise figure of 7 dB, and an output P1dB of 27 dBm. The device operates on a supply voltage of 2.75 V to 5 V with a current draw of 300 mA. Key performance metrics include an OIP3 of 39 dBm and input return loss of 8 dB. It is housed in an 8-MSOP surface-mount package with an exposed pad, suitable for wireless applications within the -40°C to +85°C temperature range.
Feature Summary
- High efficiency GaAs InGaP HBT MMIC construction
- Integrated power amplifier design for 2.2–2.8 GHz bands
- Surface-mount 8-pin MSOP package with exposed thermal pad
Applications
- Bluetooth systems
- Wireless LAN modules
- ISM band transmitters
Procurement Notes
Verify component status carefully as this part is designated End-of-Life by Analog Devices Inc. Distribution availability is currently restricted or unavailable through major channels such as Mouser. Confirm obsolescence timelines and last-time-buy requirements directly with authorized suppliers before finalizing procurement plans to avoid supply chain disruptions.
Selection Notes
Select this component only if the specific 2.2–2.8 GHz frequency range and 20 dB gain profile match the system requirements. Consider the thermal management needs associated with the 8-MSOP exposed pad package. Evaluate alternative active devices from the manufacturer's current portfolio due to the end-of-life status of this specific part number.
Part Context
The HMC414MS8GE belongs to the HMC414 series of monolithic microwave integrated circuits. It utilizes GaAs InGaP heterojunction bipolar transistor technology to deliver high linearity and efficiency in a compact form factor. This series targets cost-effective solutions for short-range wireless communication infrastructure and consumer electronics requiring reliable RF power amplification.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, engineers should consult Analog Devices for recommended cross-reference components or next-generation replacements that offer compatible pinouts and electrical specifications.
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