HMC459

Overview

The HMC459 is a GaAs MMIC PHEMT distributed power amplifier die operating from DC to 18 GHz. It delivers 17 dB gain with a noise figure of 3 dB. The device provides +25 dBm output power at 1 dB compression and +31.5 dBm output IP3. Operating on an 8 V supply, it draws 290 mA current. Key RF parameters include 19 dB input return loss and 4.64 W power dissipation. The component supports operation between -55°C and +85°C.

Feature Summary

• Utilizes GaAs MMIC PHEMT technology for high-frequency performance
• Features distributed architecture covering DC to 18 GHz range
• Provides high linearity with +31.5 dBm output IP3

Applications

• Telecom infrastructure systems
• VSAT communication equipment
• GPS signal processing modules

Procurement Notes

Verify availability status carefully as the HMC459 may be subject to limited supply or factory special orders. Confirm RoHS compliance details through official documentation before integration. Ensure handling procedures account for the bare die package format. Validate that the specific ordering suffix matches the required electrical characteristics for your design implementation.

Selection Notes

Select this component when designing wideband RF front-ends requiring high gain up to 18 GHz. The bare die format necessitates careful PCB layout and thermal management considerations. Evaluate the 8 V supply requirement against system power constraints. Consider the GaAs technology benefits for high-frequency linearity in space-constrained applications.

Part Context

This part belongs to Analog Devices' HMC series of RF amplifiers. It is categorized under wireless and RF integrated circuits. The HMC459G variant represents the specific product family designation. It serves as a critical active component for microwave frequency generation and amplification tasks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.