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Product Detailed Parameters
- Description:LO NOISE AMP CHIP, 17 - 26 GHZ
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- Mfr:Analog Devices Inc.
- Package:Bulk
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Overview
The HMC517 is a GaAs pHEMT MMIC low noise amplifier designed for operation within the 17 GHz to 26 GHz frequency range. It requires a single 3 V power supply and draws approximately 65 mA of current. The device provides a typical gain of 19 dB with a noise figure of 2.2 dB. Key performance metrics include a P1dB compression point of 11 dBm, an OIP3 of 23 dBm, and an input return loss of 17 dB. Power dissipation is rated at 880 mW. It operates between -55°C and +85°C and is supplied in a die configuration.
Feature Summary
- Utilizes GaAs pHEMT MMIC technology for high-frequency signal amplification
- Engineered for low noise figure performance in the Ka-band spectrum
- Operates on a single 3 V power supply with low current consumption
Applications
- VSAT communication systems
- DBS satellite receivers
- Point-to-point microwave links
Procurement Notes
Verify availability status carefully as this component may be subject to limited supply or factory special order conditions. Confirm the specific package variant required, such as bare die or packaged versions like HMC517-SX or HMC517LC4TR, as electrical parameters can vary slightly between form factors. Ensure compatibility with existing RF design specifications before ordering.
Selection Notes
Select the HMC517 when designing circuits requiring high gain and low noise in the 17-26 GHz band. Consider the HMC517LC4TR if surface-mount packaging is preferred over bare die integration. Evaluate thermal management requirements based on the 880 mW power dissipation rating. Verify that the system impedance matches the amplifier's input and output characteristics for optimal return loss performance.
Part Context
This component belongs to the HMC517G series from Analog Devices Inc., specifically categorized under wireless and RF integrated circuits. It serves as a fundamental building block for front-end receiver chains in satellite and microwave communication infrastructure. The device represents a specialized solution for Ka-band applications where size and noise performance are critical constraints.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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