HMC582LP5E

Overview

The HMC582LP5E is a GaAs InGaP HBT MMIC Voltage Controlled Oscillator (VCO) from Analog Devices, designed for high-frequency applications. It operates within a frequency range of 11.1 GHz to 12.4 GHz and requires a supply voltage between 4.75 V and 5.25 V. The device draws a current of 390 mA and features a tuning voltage range of 2 VDC to 12 VDC with a sensitivity of 30 MHz/V. It provides an output power of 5 dBm and exhibits a phase noise of -110 dBc/Hz. Secondary harmonics are suppressed by at least 25 dBc. The component is housed in a QFN-32 package measuring 5.1 mm x 5.1 mm x 1 mm and supports operation temperatures from -40°C to +85°C.

Feature Summary

• Integrates resonators and negative resistance circuits into a single monolithic microwave integrated circuit.
• Provides dedicated half-frequency (Fo/2) and divide-by-four outputs alongside the primary signal.
• Utilizes GaAs InGaP Heterojunction Bipolar Transistor technology for robust performance.

Applications

• Military radar systems
• Point-to-point communication links
• Satellite communication terminals

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to restricted availability status. Confirm that the specific suffix 'E' denotes the lead-free variant compliant with RoHS standards. Ensure storage conditions account for moisture sensitivity levels prior to surface mount assembly. Validate that the QFN-32 exposed pad thermal requirements match the target PCB design specifications.

Selection Notes

Select this model when a wide tuning range near 12 GHz is required with integrated harmonic outputs. The QFN-32 package offers a compact footprint suitable for space-constrained RF designs. Consider the 390 mA current draw for power budget calculations. Verify that the 30 MHz/V tuning sensitivity aligns with the available control voltage resolution in the system architecture.

Part Context

This component belongs to the HMC582 series of MMIC VCOs manufactured by Analog Devices. These devices are engineered using GaAs InGaP HBT processes to deliver stable oscillation across microwave frequencies. The series is characterized by its integration capabilities, reducing the need for external discrete components typically required in traditional oscillator designs.

Replacement Considerations

HMC512LP5E: Offers similar functionality but operates in the 9.6–10.8 GHz range.

FAQ

What type of semiconductor technology is used in the HMC582LP5E?

The HMC582LP5E utilizes GaAs InGaP Heterojunction Bipolar Transistor (HBT) technology.

Does the HMC582LP5E provide outputs other than the fundamental frequency?

Yes, it integrates outputs for half-frequency (Fo/2) and divide-by-four signals.