HMJ45N03S

$1.02

Description：HMJ45N03S
Series：-
Mfr：HY Electronic (Cayman) Limited
Package：Tape & Reel (TR)

SKU:92495161f9da Category: Single FETs, MOSFETs Brand: HY Electronic (Cayman) Limited

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Product introduction

Product Detailed Parameters

Description：HMJ45N03S
Series：-
Mfr：HY Electronic (Cayman) Limited
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1230 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：25W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PDFN (3x3)
Package / Case：8-PowerVDFN

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HMJ45N03S

Overview

The HMJ45N03S is an N-channel MOSFET manufactured by HY Electronic (Cayman) Limited. It features a Drain-Source Voltage of 30V and a Continuous Drain Current of 45A at 25°C. The device offers low on-resistance, with RDS(ON) less than 6.5mΩ at VGS = 4.5V and less than 5mΩ at VGS = 10V. It utilizes a PDFN3x3 package for surface mount applications.

Feature Summary

Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Avalanche Voltage and Current

Applications

Onboard Charger
DC-DC Converters
Notebook

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the PDFN3x3 package dimensions and thermal characteristics align with the target PCB layout requirements. Ensure all electrical parameters meet the system's operational limits under expected load conditions.

Selection Notes

Select this component for applications requiring high current handling in a compact form factor. The low on-resistance supports efficient power conversion. Verify compatibility with standard gate drive voltages. Evaluate thermal management solutions based on the specified junction-to-ambient resistance.

Part Context

This part belongs to the general-purpose power MOSFET category designed for switching applications. It is intended for use in power management circuits where size constraints are critical. The PDFN3x3 package provides a balance between thermal performance and board space efficiency.