HMPS-2822-TR2

RF Diode Overview

The Broadcom HMPS-2822-TR2 is a surface-mount RF Schottky barrier diode housed in the MiniPak QFN package. It features an anti-parallel configuration with two matched diodes. Key electrical specifications include a minimum breakdown voltage of 15 V, a maximum forward voltage of 340 mV at 1 mA, and a maximum reverse leakage current of 10 nA at 100 V. The device exhibits a maximum capacitance of 1 pF at 0 V bias and 1 MHz frequency, along with a typical dynamic resistance of 12 ohms at 5 mA forward current.

RF Diode Feature Summary

• MiniPak leadless packaging reduces parasitics and thermal resistance compared to conventional leaded diodes
• Anti-parallel configuration provides matched diodes for consistent performance
• Low turn-on voltage characteristics suitable for high-frequency applications up to 6 GHz

RF Diode Applications

• Mixing circuits
• Signal detection
• Switching applications
• Sampling and clamping
• Wave shaping

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm the reel quantity and tape orientation. Confirm that the component matches the MiniPak QFN package outline rather than the MiniPak 1412 variant. Ensure static discharge precautions are observed during handling due to the sensitivity of the semiconductor junctions.

RF Diode Selection Notes

Select this component when low series resistance and low forward voltage are required for mixed-signal or RF designs. The anti-parallel structure is ideal for balanced mixer topologies. Verify that the 15 V peak inverse voltage rating meets the circuit's transient requirements and that the 1 pF capacitance aligns with the target operating frequency bandwidth.

RF Diode Part Context

This part belongs to the HMPS-282x family of ultra-miniature Schottky diodes designed for high-performance RF applications. The series offers various configurations including single, dual, and quad versions. The HMPS-2822 specifically utilizes the anti-parallel arrangement within the MiniPak QFN footprint to optimize space and electrical performance.

RF Diode Replacement Considerations

HMPS-2825-TR2 (Parallel configuration)

RF Diode FAQ

What is the effective carrier lifetime for the HMPS-2822?

The effective carrier lifetime is 100 ps maximum, measured using the Krakauer method at 5 mA.

How does the Vf match behave in series pairs?

The forward voltage difference (ΔVF) for diodes in pairs is limited to a maximum of 15 mV at 1 mA.

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated at 150°C.