HN1A01F-GR(TE85L,F

Overview

The HN1A01F-GR(TE85L,F is a dual PNP bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It features a common emitter configuration housed in an SM6 surface-mount package, equivalent to SC-74 or SOT-457. The device supports a maximum collector-emitter voltage of -50V and a continuous collector current of -150mA per element. Key electrical characteristics include a DC current gain (hFE) minimum of 120 at 2mA and 6V, with a transition frequency of 80MHz. Maximum power dissipation is rated at 300mW, and the unit operates within a junction temperature range up to 125°C.

Feature Summary

• Dual PNP transistor array integrated into a compact surface-mount package for space-constrained designs.
• Common emitter configuration simplifies circuit layout for switching and amplification applications.
• High current gain and moderate transition frequency suitable for general-purpose signal processing.

Applications

• General-purpose switching circuits in portable electronic devices.
• Signal amplification stages in consumer electronics.
• Interface logic level shifting in low-power embedded systems.

Procurement Notes

Verify the complete part number including the suffix TE85L,F to ensure correct tape-and-reel packaging compatibility with automated assembly equipment. Confirm RoHS compliance status through official Toshiba documentation prior to integration, as environmental declarations may vary by production batch. Cross-reference the manufacturer product code against distributor catalogs to avoid confusion with similar BJT arrays.

Selection Notes

Select this component when a dual PNP configuration is required in a small outline package. Ensure the application voltage does not exceed the -50V collector-emitter breakdown rating. Verify that the required current gain meets the minimum hFE specification at the operating collector current. Consider thermal management if power dissipation approaches the 300mW limit in enclosed environments.

Part Context

This component belongs to Toshiba's line of discrete bipolar transistor arrays designed for high-density PCB layouts. The SM6 package provides a footprint advantage over through-hole alternatives, facilitating miniaturization in mobile and handheld devices. It serves as a functional alternative to single PNP transistors where paired matching or simplified wiring is beneficial.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult Toshiba's official replacement guide or contact technical support for qualified equivalents. Direct pin-to-pin replacements must match the SM6/SOT-457 package and electrical ratings precisely.