HN1A01FE-GR,LXHF

Overview

The HN1A01FE-GR,LXHF is a dual PNP epitaxial planar silicon transistor manufactured by Toshiba Semiconductor and Storage. Designed for audio frequency general-purpose amplifier applications, it features a compact ES-6 (SOT-563) surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -150 mA. It offers a high DC current gain (hFE) ranging from 120 to 400 at 2 mA and 6 V, with an excellent hFE linearity ratio of approximately 0.95. Key electrical parameters include a collector-base voltage (VCBO) of -50 V, emitter-base voltage (VEBO) of -5 V, saturation voltage of 100 mV, power dissipation of 100 mW, and a transition frequency (fT) of 80 MHz.

Feature Summary

• Dual PNP configuration in a compact SMD package suitable for space-constrained designs
• High current gain with excellent linearity across operating currents
• Automotive-grade qualification ensuring reliability in demanding environments

Applications

• Audio-frequency general-purpose amplifiers
• Automotive electronic systems requiring AEC-Q200 qualified components
• General-purpose switching and amplification circuits

Procurement Notes

Verify the complete part number including suffixes such as GR and LXHF, as these indicate specific tape-and-reel packaging and lead-free compliance standards. Confirm RoHS directive adherence and automotive AEC-Q200 certification status directly with the manufacturer or authorized distributors before procurement. Ensure storage conditions align with moisture sensitivity levels specified in the datasheet to maintain component integrity prior to assembly.

Selection Notes

Select this component when a dual PNP transistor with high gain and low saturation voltage is required in a small footprint. The 80 MHz transition frequency makes it suitable for audio and intermediate frequency applications. Consider the 100 mW power dissipation limit and thermal management requirements for the ES-6 package when designing the circuit layout. Verify that the -50 V voltage ratings meet the system's maximum operational limits.

Part Context

This part belongs to Toshiba's HN1 series of dual bipolar junction transistors, specifically designed for audio and general-purpose amplification. The HN1A01FE variant utilizes an epitaxial planar process for improved performance and consistency. It is part of a broader family of pre-biased and discrete transistors offered by Toshiba Semiconductor and Storage for consumer, industrial, and automotive electronics.

Replacement Considerations

Direct substitutes within the same Toshiba HN1 series should be evaluated based on pin compatibility and electrical parameter matching. Cross-manufacturer replacements require verification of hFE ranges, saturation voltages, and package dimensions to ensure functional equivalence without redesigning the PCB footprint.