HN1A01FE-Y,LF

Overview

The HN1A01FE-Y,LF is a dual PNP epitaxial silicon transistor manufactured by Toshiba Semiconductor and Storage. It features a US-6 (ES-6) surface-mount package designed for audio-frequency general-purpose amplifier applications. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -50 V and a maximum DC collector current (IC) of -150 mA. The device exhibits a high current gain (hFE) ranging from 120 to 400, with excellent linearity where the ratio of hFE at -0.1 mA to hFE at -2 mA is typically 0.95. Power dissipation is rated at 200 mW, and the transition frequency (fT) reaches 80 MHz.

Feature Summary

• Dual PNP configuration in a compact surface-mount package suitable for high-density circuit designs.
• High current gain (hFE) range of 120 to 400 ensures efficient signal amplification.
• Excellent hFE linearity maintains consistent performance across varying collector currents.
• Robust voltage and current ratings support general-purpose audio-frequency amplifier tasks.

Applications

• Audio-frequency general-purpose amplifier circuits
• Small-scale high-density circuit designs requiring dual transistors
• General-purpose switching and amplification in consumer electronics

Procurement Notes

Verify the complete ordering part number including suffixes such as -Y,LF against official Toshiba Semiconductor and Storage documentation to ensure correct packaging and compliance specifications. Confirm RoHS status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions align with semiconductor handling guidelines to maintain component integrity before assembly.

Selection Notes

Select this component when a dual PNP transistor with high current gain and moderate voltage ratings is required for audio applications. The US-6 package offers a compact footprint compared to larger through-hole alternatives. Consider the 200 mW power dissipation limit and -50 V breakdown voltage when designing circuits to ensure operation remains within safe limits under all expected load conditions.

Part Context

The HN1A01FE-Y,LF belongs to Toshiba's HN1A series of dual PNP epitaxial transistors. This series is specifically engineered for audio-frequency general-purpose amplifier applications. The FE suffix typically denotes the specific tape-and-reel packaging format, while LF indicates lead-free composition compliant with environmental standards. It serves as a compact solution for replacing discrete single-transistor pairs in space-constrained designs.

Replacement Considerations

Direct replacements must match the dual PNP configuration, US-6/ES-6 package, and similar electrical parameters (-50 V VCEO, -150 mA IC). Verify pinout compatibility and thermal characteristics. Consult Toshiba's official cross-reference guides for validated substitutes that meet identical functional and mechanical requirements.

FAQ

What is the typical hFE linearity characteristic of the HN1A01FE-Y,LF?

The device exhibits excellent hFE linearity, with a typical ratio of hFE measured at -0.1 mA to hFE measured at -2 mA equal to 0.95.

What is the maximum power dissipation rating for this component?

The maximum power dissipation (Pd) is rated at 200 mW.

Is the HN1A01FE-Y,LF qualified for automotive applications?

Based on available public data, the HN1A01FE-Y,LF is specified for audio-frequency general-purpose amplifier applications. Automotive qualification (e.g., AEC-Q101) is not explicitly confirmed for this specific part number in the provided documentation.