HN1A01FE-Y,LXHF

HN1A01FE-Y,LXHF

$0.59
  • Description:TRANS 2PNP DUAL 50V 150MA ES6
  • Series:-

SKU:30dc27395056 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 50V 150MA ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
  • Power - Max:100mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6
  • Grade:Automotive
  • Qualification:AEC-Q101

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HN1A01FE-Y,LXHF

Overview

The HN1A01FE-Y,LXHF is a dual PNP pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP bipolar junction transistors with built-in biasing resistors in an ES6 (SOT-563) surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (Ic) of 150mA per transistor. Key electrical specifications include a DC current gain (hFE) ranging from 120 to 400, a transition frequency (fT) of 80MHz, and a maximum power dissipation of 100mW. The component is AEC-Q101 qualified for automotive applications and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Dual PNP configuration with integrated base resistors simplifies circuit design
  • Automotive grade qualification ensures reliability in harsh environments
  • Compact ES6 surface-mount package facilitates high-density PCB layouts

Applications

  • Automotive control circuits requiring dual switching elements
  • General-purpose logic level translation interfaces
  • Low-power signal switching in consumer electronics

Procurement Notes

Verify the specific suffix LXHF against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Ensure the ordering quantity matches the tape-and-reel specification provided in the official documentation. Cross-reference the AEC-Q101 certification details if the application mandates strict automotive quality standards.

Selection Notes

Select this component when a dual PNP pre-biased solution is required with a 150mA current rating. Compare the 80MHz transition frequency against system speed requirements. Consider the 100mW power dissipation limit relative to ambient temperature conditions. Verify that the ES6 package dimensions fit the available footprint on the target printed circuit board.

Part Context

This part belongs to Toshiba's RN/HN series of pre-biased transistor arrays. These devices combine transistors and resistors to reduce component count and assembly time. The HN prefix typically denotes PNP polarity, distinguishing it from the NPN-based RN series. This specific model offers a balance of moderate speed and current handling suitable for general switching tasks.

Replacement Considerations

Direct substitutes include other dual PNP pre-biased transistors in SOT-563 packages with similar VCEO and Ic ratings. Verify resistor values and hFE ranges match the original design constraints. Check for equivalent AEC-Q101 qualification if automotive compliance is mandatory.

HN1A01FE-Y,LXHFHN1A01FE-Y,LXHF
$0.59
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