HN1A01FU-GR,LXHF

Description：PNP + PNP BIPOLAR TRANSISTOR, -5
Series：*

SKU:e85dde38e75d Category: Bipolar Transistor Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：PNP + PNP BIPOLAR TRANSISTOR, -5
Series：*
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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HN1A01FU-GR,LXHF

Overview

The HN1A01FU-GR,LXHF is a dual PNP epitaxial planar silicon transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter breakdown voltage (VCEO) of -50 V and a continuous collector current (IC) of -150 mA. The device operates within a junction temperature range up to 150°C and has a maximum power dissipation of 200 mW. Packaged in the US6 surface-mount format, it offers a DC current gain (hFE) ranging from 120 to 400 at IC = -0.1 mA. This component is designed for audio-frequency general-purpose amplifier applications.

Feature Summary

Dual PNP configuration in a compact surface-mount package
High voltage and high current capability with -50 V VCEO and -150 mA IC
Excellent hFE linearity for consistent amplification performance

Applications

Audio-frequency general-purpose amplifier circuits
General-purpose switching applications requiring dual PNP logic
Signal processing stages in consumer electronics

Procurement Notes

Verify the specific suffix GR against official Toshiba documentation to confirm exact binning or tape-and-reel specifications. Ensure the LXHF designation aligns with RoHS compliance requirements for your assembly process. Cross-reference the US6 package dimensions with your PCB footprint library to prevent mounting errors during production.

Selection Notes

Select this component when a dual PNP structure is required in a minimal footprint. The -50 V rating suits low-voltage signal paths. Compare hFE linearity metrics against alternatives if precise gain matching between transistors is critical. Confirm thermal management capabilities for 200 mW dissipation in enclosed designs.

Part Context

This part belongs to Toshiba's HN1 series of dual bipolar junction transistors. It utilizes epitaxial planar technology for improved reliability. The US6 package provides a small outline suitable for high-density board layouts. It serves as a complementary pair solution for circuits needing matched PNP characteristics.

Replacement Considerations

Direct substitutes include the HN1A01F and HN1A01FE variants from Toshiba, which share identical electrical characteristics but may differ in packaging or trailing zeros. Verify pinout compatibility before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.