HN1B01FDW1T1G

Overview

The HN1B01FDW1T1G is a dual bipolar junction transistor (BJT) array manufactured by Fairchild Semiconductor, housed in an SC-74 surface-mount package. It integrates one NPN and one PNP transistor within a single component. The device supports a maximum collector current of 200mA and a collector-emitter breakdown voltage of 50V. Power dissipation is rated at 380mW, with a junction temperature range spanning from -55°C to 150°C. DC current gain (hFE) is specified at a minimum of 200 when tested at 2mA collector current and 6V collector-emitter voltage. Saturation voltage characteristics include a maximum of 250mV for the NPN and 300mV for the PNP, both measured at 10mA base current and 100mA collector current.

Feature Summary

• Integrates complementary NPN and PNP transistors into a single compact surface-mount package
• Provides high DC current gain suitable for general-purpose switching applications
• Operates across an extended industrial temperature range up to 150°C junction temperature

Applications

• General-purpose digital logic interfacing
• Signal switching circuits
• Complementary amplifier stages

Procurement Notes

Verify the manufacturer part number against official Fairchild or ON Semiconductor documentation to ensure authenticity. Confirm that the SC-74 package dimensions match the design footprint requirements. Check for RoHS compliance status if environmental regulations apply to the specific production batch. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to assembly.

Selection Notes

Select this component when space constraints require a dual BJT configuration in an SC-74 package. Verify that the 200mA continuous collector current meets the load requirements. Ensure the 50V breakdown voltage provides sufficient margin for the operating circuit voltage. Confirm compatibility with the required saturation voltage levels for low-power switching tasks.

Part Context

This component belongs to the HN1B01 series of dual BJT arrays produced by Fairchild Semiconductor, which was later acquired by ON Semiconductor. The HN1B01FDW1T1G variant specifically denotes the tape-and-reel packaging format. It serves as a discrete alternative to integrated logic gates where analog switching or complementary amplification is needed.

Replacement Considerations

Check for direct equivalents such as the MC14069UB or other dual BJT arrays in compatible packages. Verify pinout compatibility before substitution. Ensure replacement parts meet the same 200mA current and 50V voltage ratings.