HN1B01FU-GR,LXHF

HN1B01FU-GR,LXHF

$0.26
  • Description:TRANS NPN/PNP 50V 150MA US6
  • Series:-

SKU:8f9dd04dc671 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 50V 150MA US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:200mW
  • Frequency - Transition:120MHz, 150MHz
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6
  • Grade:Automotive
  • Qualification:AEC-Q101

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HN1B01FU-GR,LXHF

Overview

The HN1B01FU-GR,LXHF is a dual bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a compact US6 (SOT-363) surface-mount package. The device supports a maximum collector current of 150 mA and withstands a collector-emitter voltage of 50 V. Power dissipation is rated at 200 mW, with gain-bandwidth products specified at 120 MHz for the NPN and 150 MHz for the PNP element. This component is designed for low-frequency small-signal amplification applications.

Feature Summary

  • Integrates complementary NPN and PNP transistors in a single dual configuration
  • Optimized for low-frequency small-signal amplification tasks
  • Compliant with AEC-Q101 automotive reliability standards

Applications

  • Automotive electronic control units requiring signal switching
  • Low-frequency analog signal amplification circuits
  • General-purpose logic interface and driver stages

Procurement Notes

Verify that the specific suffix LXHF matches the required packaging format and tape-and-reel specifications for your assembly line. Confirm RoHS compliance status and ensure the supplier provides valid traceability documentation for automotive-grade components. Cross-reference the part number against official Toshiba distribution channels to avoid counterfeit inventory.

Selection Notes

Select this component when a matched NPN/PNP pair is required for differential or push-pull configurations in space-constrained designs. The US6 package offers a footprint advantage over discrete solutions. Ensure the 150 mA current rating and 50 V voltage limits align with the target circuit's operational boundaries before integration.

Part Context

This part belongs to Toshiba’s series of dual bipolar transistor arrays designed for compact electronics. It serves as an alternative to using two separate discrete transistors, reducing board space and simplifying layout. The automotive qualification ensures suitability for harsh environmental conditions found in vehicle systems.

Replacement Considerations

Direct substitutes include the HN1B01FU-GR,LF variant, which shares identical electrical characteristics but may differ in reel packaging. Verify pinout compatibility and thermal performance when swapping between these specific Toshiba variants.

HN1B01FU-GR,LXHFHN1B01FU-GR,LXHF
$0.26
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