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The HN1B01FU-GR,LXHF is a dual bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a compact US6 (SOT-363) surface-mount package. The device supports a maximum collector current of 150 mA and withstands a collector-emitter voltage of 50 V. Power dissipation is rated at 200 mW, with gain-bandwidth products specified at 120 MHz for the NPN and 150 MHz for the PNP element. This component is designed for low-frequency small-signal amplification applications.
Verify that the specific suffix LXHF matches the required packaging format and tape-and-reel specifications for your assembly line. Confirm RoHS compliance status and ensure the supplier provides valid traceability documentation for automotive-grade components. Cross-reference the part number against official Toshiba distribution channels to avoid counterfeit inventory.
Select this component when a matched NPN/PNP pair is required for differential or push-pull configurations in space-constrained designs. The US6 package offers a footprint advantage over discrete solutions. Ensure the 150 mA current rating and 50 V voltage limits align with the target circuit's operational boundaries before integration.
This part belongs to Toshiba’s series of dual bipolar transistor arrays designed for compact electronics. It serves as an alternative to using two separate discrete transistors, reducing board space and simplifying layout. The automotive qualification ensures suitability for harsh environmental conditions found in vehicle systems.
Direct substitutes include the HN1B01FU-GR,LF variant, which shares identical electrical characteristics but may differ in reel packaging. Verify pinout compatibility and thermal performance when swapping between these specific Toshiba variants.