HN1B04FE-GR,LF

Overview

The HN1B04FE-GR,LF is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in biasing resistors in a compact surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per element. Designed for high-frequency applications, it features a transition frequency of 200MHz. The component operates within a temperature range of -40°C to 85°C and includes internal resistors R1 and R2 to simplify circuit design and reduce board space requirements.

Feature Summary

• Integrates dual NPN transistors with pre-installed biasing resistors for simplified driver circuits
• Optimized for high-speed switching applications with a 200MHz transition frequency
• Compact surface-mount packaging reduces footprint compared to discrete resistor-transistor combinations

Applications

• General-purpose switching circuits requiring compact form factors
• Driver stages for logic interfaces and signal conditioning
• High-speed digital switching applications in consumer electronics

Procurement Notes

Verify the specific suffix GR against official Toshiba documentation to confirm tape-and-reel packaging specifications and pinout orientation. Ensure compatibility with automated placement equipment regarding package dimensions. Confirm RoHS compliance status through the manufacturer's latest environmental declaration prior to procurement.

Selection Notes

Select this component when dual NPN switching with integrated biasing is required in a minimal footprint. Compare transition frequency and saturation voltage against alternative arrays if higher speed or lower loss is critical. Verify that the 100mA current rating meets the load requirements of the target application without exceeding thermal limits.

Part Context

This part belongs to Toshiba's HN series of pre-biased transistor arrays, which are designed to replace discrete resistor-transistor networks. The series offers various configurations including single and dual units with different resistance values. The HN1B04 variant specifically provides dual NPN structures suitable for general-purpose logic interfacing and switching tasks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult Toshiba's official cross-reference guides or distributor databases for equivalent components from other manufacturers.