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The HN1B04FE-Y,LXHF is a dual NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal biasing resistors in an ES-6 (SOT-563) surface-mount package. The device features a collector-emitter voltage (Vceo) of 50 V, a maximum DC collector current (Ic) of 100 mA, and a power dissipation (Pd) of 100 mW. It has a gain-bandwidth product (fT) of 80 MHz and operates within a temperature range of -55°C to +150°C. This component is designed for use in digital switching applications requiring compact solutions.
Verify the specific ordering suffix 'Y,LXHF' against the manufacturer's datasheet to confirm reel packaging and tape-and-reel specifications. Ensure compatibility with AEC-Q101 automotive qualification requirements if used in vehicle systems. Cross-reference the ES-6 package dimensions with your PCB footprint library before finalizing procurement orders.
Select this component when a dual NPN configuration with integrated base resistors is required in a small SOT-563 package. Compare the 100 mA current rating and 50 V voltage limit against circuit demands. Consider the 80 MHz fT for switching speed requirements. Verify that the 100 mW power dissipation rating accommodates the thermal design of the target application.
This part belongs to Toshiba's HN1B series of pre-biased transistors. These devices are commonly used as alternatives to discrete resistor-transistor networks. The HN1B04 variant specifically provides dual NPN outputs. The FE suffix typically denotes automotive-grade qualification, while LXHF indicates specific packaging and handling characteristics defined by the manufacturer.
Potential substitutes include other dual NPN pre-biased transistors in SOT-563 packages with similar 50V/100mA ratings. Check pinout compatibility carefully, as resistor values and internal configurations may vary between manufacturers. Verify that any replacement meets the same AEC-Q101 reliability standards if applicable.