HN1B04F(TE85L,F)

Overview

The HN1B04F(TE85L,F) is a dual NPN epitaxial planar silicon transistor manufactured by Toshiba Semiconductor and Storage. Designed for audio frequency general-purpose amplifier applications, it utilizes the PCT process technology to ensure high reliability and consistent performance. The component is housed in an SC-74 (SOT-457) surface-mount package, specifically identified as SM6, which facilitates automated assembly and compact circuit board layouts. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 150mA. With a transition frequency of 80MHz and a power dissipation capacity of 300mW, this device is optimized for low-noise amplification tasks within consumer electronics and audio equipment.

Feature Summary

• Dual NPN configuration integrated into a single compact surface-mount package for space-efficient designs.
• Optimized for audio frequency applications with low noise characteristics suitable for general-purpose amplification.
• Constructed using epitaxial planar silicon technology to provide stable electrical performance.

Applications

• Audio frequency general-purpose amplifier circuits
• Driver stage amplification in consumer electronics
• Low-noise signal processing stages

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's latest datasheet to confirm packaging details such as reel size or tape specifications. Ensure that the SC-74 footprint matches your PCB design constraints. Cross-reference the RoHS compliance status with current environmental regulations before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration is required for audio amplification within a limited board area. Compare the 80MHz transition frequency against higher-speed requirements if RF applications are involved. Evaluate the 300mW power dissipation limit relative to the thermal management capabilities of the target enclosure and PCB copper area.

Part Context

This part belongs to Toshiba's HN1 series of small-signal transistors, which are widely used in analog signal processing. The TE85L,F suffix indicates a specific tape-and-reel packaging format intended for high-volume surface-mount manufacturing processes. It serves as a discrete alternative to integrated amplifier modules where discrete gain stages are preferred for flexibility.

Replacement Considerations

Potential substitutes include other dual NPN transistors in SOT-457 packages with similar Vceo and Ic ratings. Verify pinout compatibility and thermal resistance values before substitution. Check for equivalent transition frequencies to maintain audio bandwidth performance.