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The HN1B04FU-GR,LXHF is a silicon PNP epitaxial type transistor manufactured by Toshiba Semiconductor and Storage. It belongs to the U-MOSVI series and is designed for audio frequency general-purpose amplifier applications, driver stage amplification, and switching operations. The component utilizes the PCT process technology and is housed in a surface-mount US6 package (SC-88/SOT-363). It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA. The device features a transition frequency of 80MHz and a maximum power dissipation of 200mW at ambient temperature.
Verify the specific ordering suffix GR against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the US6 package variant matches the target PCB footprint requirements. Confirm AEC-Q101 qualification status if automotive reliability standards are required for the end application.
Select this component when a compact PNP transistor array is needed for audio or low-frequency signal processing. The US6 package offers space efficiency for dense layouts. Verify that the 80MHz transition frequency meets the bandwidth requirements of the intended amplifier or switching circuit before finalizing the design.
This part is part of Toshiba's discrete semiconductor lineup focusing on small-signal transistors. It complements other HN-series devices like the HN1C01FU-GR,LF. The US6 package is standard for space-constrained consumer electronics and industrial control boards requiring reliable PNP switching or amplification capabilities.
Publicly confirmed direct substitute part numbers are not available in the provided documentation. Evaluate alternative PNP transistors in the SC-88/SOT-363 package with similar Vceo, Ic, and fT specifications only after verifying pin-to-pin compatibility and thermal characteristics.