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The HN1B04FU-Y,LXHF is a silicon NPN epitaxial type dual transistor array manufactured by Toshiba Semiconductor and Storage. It utilizes the PCT process for high reliability and is housed in an ES-6 (SOT-563) surface-mount package. The device features a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 150 mA, and a power dissipation (PD) of 100 mW. It exhibits a DC current gain (hFE) range of 120 to 400 and a transition frequency (fT) of 80 MHz. Designed for automotive applications, it meets AEC-Q101 qualification standards.
Verify the specific suffix LXHF against the manufacturer's official datasheet to confirm packaging details and RoHS compliance status. Ensure the ordering code matches the exact pinout and electrical specifications required for the target design. Cross-reference the AEC-Q101 certification requirements with the system's automotive grade standards before finalizing procurement.
Select this component when a dual NPN configuration is required for audio or general-purpose amplification in space-constrained designs. The 50 V rating and 150 mA current capacity suit low-power switching tasks. Consider the 80 MHz transition frequency for signal integrity in moderate-speed applications. Verify thermal management needs given the 100 mW power dissipation limit in the small ES-6 package.
This part belongs to Toshiba's HN1 series of pre-biased and dual transistor arrays designed for automotive and industrial use. The HN1B04 variant specifically provides two NPN transistors in a single package, replacing discrete components to save board space. The FU/Y suffix indicates the specific tape-and-reel packaging format used for automated assembly.
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult Toshiba's official replacement guide or distributor cross-reference tools for verified equivalents that match the ES-6 package and electrical parameters.