HN1B04FU-Y(T5L,F,T

Description：TRANS NPN/PNP 50V 150MA US6
Series：-

SKU:9687d0f4c2f2 Category: Bipolar Transistor Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS NPN/PNP 50V 150MA US6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Cut Tape (CT)
Transistor Type：1 NPN, 1 PNP
Current - Collector (Ic) (Max)：150mA
Voltage - Collector Emitter Breakdown (Max)：50V
Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 2mA, 6V
Power - Max：200mW
Frequency - Transition：150MHz
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：US6
Grade：-
Qualification：-

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HN1B04FU-Y(T5L,F,T

Overview

The HN1B04FU-Y(T5L,F,T is a silicon PNP epitaxial type transistor manufactured by Toshiba Semiconductor and Storage. It utilizes the PCT process for low noise performance. The device is configured as a single-element NPN transistor intended for audio frequency general-purpose amplifier applications. It operates with a collector current of 0.15A and a collector-emitter breakdown voltage of 50V. The component features a minimum DC current gain (hFE) of 120 at specified test conditions. It is housed in a surface-mount package suitable for automated assembly.

Feature Summary

Utilizes PCT process technology for enhanced electrical characteristics
Optimized for low noise operation in audio frequency circuits
Designed specifically for general-purpose amplifier applications

Applications

Audio frequency general-purpose amplifiers
Driver stage amplifiers
Switching applications

Procurement Notes

Verify the exact suffix configuration against official Toshiba documentation to ensure correct binning and packaging specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into production lines. Cross-reference the specific ordering code with authorized distributors to validate availability and authenticity.

Selection Notes

Select this component when designing audio pre-amplifier stages requiring low noise characteristics. Ensure the circuit design accommodates the 50V collector-emitter voltage rating and 0.15A maximum collector current. Verify that the required hFE gain meets the minimum threshold of 120 for the intended operating point.

Part Context

This part belongs to the HN1B series of epitaxial transistors designed for audio applications. It shares functional similarities with other members like the HN1B01FU but differs in polarity and specific electrical parameters. The family is characterized by the use of PCT processing for improved noise performance in small signal environments.

Replacement Considerations

Direct substitutes include the HN1B04FU and HN1B04FU-GR from the same manufacturer. Evaluate pin compatibility and thermal characteristics before replacing with components from other vendors.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.